Title :
2.5 Gbps operation of 1.55 μm quantum dot laser
Author :
Oh, D.K. ; Lee, J.H. ; Kim, J.S. ; Hong, S.U. ; Choi, B.S. ; Kwack, H.S.
Author_Institution :
Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
An 1.55 μm InAs quantum dot laser on the InP(100) substrate was operated under continuous wave current at room temperature and had a high characteristics temperature over 150 K. The bandwidth of f-3 dB ∼ 3 GHz was measured with the good "eye" pattern under 2.5 Gbps data transmission.
Keywords :
III-V semiconductors; indium compounds; laser transitions; optical communication equipment; quantum dot lasers; 1.55 mum; 2.5 Gbit/s; InAs; InP; continuous wave current; data transmission; eye pattern; quantum dot laser;
Conference_Titel :
Optical Communication, 2005. ECOC 2005. 31st European Conference on
Conference_Location :
IET
Print_ISBN :
0-86341-543-1
