Title :
Passively modelocked 20 and 40 GHz bulk InGaAsP lasers
Author :
Barbarin, Y. ; Bente, E.A.J.M. ; Heck, M.J.R. ; Oei, Y.S. ; Notzel, R. ; Smit, M.K.
Author_Institution :
Eindhoven Univ. of Technol., Netherlands
Abstract :
Passively modelocked linear lasers have been fabricated using bulk InGaAsP/InP material. Modelocking in 20 GHz self colliding pulse modelocked lasers and 40 GHz colliding pulse lasers has been demonstrated and the devices have been characterised. Pulse lengths down to 1.6 ps have been observed.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; laser mode locking; optical pulse generation; semiconductor lasers; 1.6 ps; 20 GHz; 40 GHz; InGaAsP lasers; InGaAsP-InP; colliding pulse lasers; passive modelocking; self colliding pulse modelocked lasers;
Conference_Titel :
Optical Communication, 2005. ECOC 2005. 31st European Conference on
Conference_Location :
IET
Print_ISBN :
0-86341-543-1
