Title :
Novel ultrafast monolithic optical gate integrating uni-traveling-carrier photodiode and InP-based Mach-Zehnder modulator
Author :
Yoshimatsu, T. ; Kodama, S. ; Ito, H.
Author_Institution :
NTT Photonics Lab., NTT Corp., Kanagawa, Japan
Abstract :
A novel ultrafast optical gate monolithically integrating a uni-traveling-carrier photodiode and an InP-based traveling-wave Mach-Zehnder modulator has been realized. A gate opening time of 5 ps and an on/off ratio of 12 dB have been achieved.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; indium compounds; integrated optics; optical receivers; photodiodes; 5 ps; InP; InP-based traveling-wave Mach-Zehnder modulator; electroabsorption modulator; monolithic integration; on-off ratio; ultrafast optical gate; uni-traveling-carrier photodiode;
Conference_Titel :
Optical Communication, 2005. ECOC 2005. 31st European Conference on
Conference_Location :
IET
Print_ISBN :
0-86341-543-1
