Title :
IDeF-X V1.0: performances of a new CMOS multi channel analogue readout ASIC for Cd(Zn)Te detectors
Author :
Gevin, O. ; Lugiez, F. ; Limousin, O. ; Dirks, B.P.F. ; Blondel, C. ; Coppolani, X. ; Baron, P. ; Delagnes, E.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
Abstract :
The evolution of the CdTe detector properties (leakage current, capacitance, and geometry) requires a continuous improvement of the electronic frond-end in terms of geometry, noise, and power consumption. This is why our group is working on a new modular spectro-imaging system based on CdTe detectors coupled to dedicated full custom readout ASICs, named IDeF-X for imaging detector front-end. We present the most recent version of IDeF-X which is a sixteen-channel analogue readout chip for hard X-ray spectroscopy. It has been processed with the standard AMS 0.35 μm CMOS technology. Each channel consists of a charge sensitive preamplifier, a pole zero cancellation stage, a variable peaking time filter and an output buffer. IDeF-X is designed to be DC coupled to detectors having a low dark current at room temperature and is optimized for input capacitance ranging from 2 to 5 pF.
Keywords :
CMOS analogue integrated circuits; X-ray spectroscopy; application specific integrated circuits; nuclear electronics; preamplifiers; readout electronics; semiconductor counters; 0.35 mum; 2 to 5 pF; CMOS multichannel analogue readout ASIC; Cd(Zn)Te detectors; IDeF-X V1.0 chip; capacitance; charge sensitive preamplifier; dark current; electronic frond-end; hard X-ray spectroscopy; imaging detector front-end; leakage current; modular spectroimaging system; output buffer; pole zero cancellation stage; sixteen-channel analogue readout chip; variable peaking time filter; Application specific integrated circuits; CMOS technology; Capacitance; Continuous improvement; Detectors; Energy consumption; Geometry; Leak detection; Leakage current; Optical imaging;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2005 IEEE
Print_ISBN :
0-7803-9221-3
DOI :
10.1109/NSSMIC.2005.1596287
