Title :
Ultrasonic defect manipulation in irradiated silicon
Abstract :
It is shown that room temperature ultrasonic defect manipulation (UDM) can significantly reduce the concentration of radiation defects in high resistivity silicon. Secondary ion mass spectroscopy reveals that oxygen- and hydrogen-related chemical reactions are activated in silicon by UDM at room temperature. This ultrasonically stimulated activation supports changes in bulk conductivity of the sample and a migration of impurities to the surface.
Keywords :
chemical reactions; electrical conductivity; elemental semiconductors; point defects; secondary ion mass spectra; ultrasonic effects; bulk conductivity; hydrogen-related chemical reaction; oxygen-related chemical reaction; radiation defects; room temperature; secondary ion mass spectroscopy; ultrasonic defect manipulation; Acoustic waves; Annealing; Conductivity; Crystallization; Mass spectroscopy; Radiation detectors; Silicon; Solids; Temperature; Ultrasonic imaging;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2005 IEEE
Print_ISBN :
0-7803-9221-3
DOI :
10.1109/NSSMIC.2005.1596298
