Title :
Detector recovery/improvement via elevated-temperature-annealing (DRIVE): a new approach for Si detector applications in high radiation environment in SLHC
Author :
Li, Zheng ; Verbitskaya, E. ; Eremin, V. ; Ivanov, A. ; Härkönen, J. ; Tuovinen, E. ; Luukka, P.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY
Abstract :
A new approach to improve Si detector radiation hardness/tolerance, termed as DRIVE (detector recovery/improvement via elevated-temperature-annealing), has been realized by annealing of oxygen-rich (magnetic CZ, MCZ), proton-irradiated Si detectors (with negative space charge before annealing) at medium temperature for a few hours. The DRIVE approach has been proved to lead to the dramatic decrease in detector leakage current, decrease in detector negative space charge concentration, and an eventual space charge sign inversion from negative to positive. Defect studies have shown significant reduction in overall defect concentrations after annealing
Keywords :
annealing; radiation effects; silicon radiation detectors; SLHC; Si detector applications; Si detector radiation hardness; Si detector radiation tolerance; detector leakage current; detector negative space charge concentration; detector recovery/improvement-via-elevated-temperature-annealing; magnetic CZ; oxygen-rich Si detector; proton-irradiated Si detector; space charge sign inversion; Annealing; Degradation; Large Hadron Collider; Leak detection; Leakage current; Physics; Radiation detectors; Silicon radiation detectors; Space charge; Temperature;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2005 IEEE
Conference_Location :
Fajardo
Print_ISBN :
0-7803-9221-3
DOI :
10.1109/NSSMIC.2005.1596445
