Detector recovery/improvement via elevated-temperature-annealing (DRIVE): a new approach for Si detector applications in high radiation environment in SLHC

Author

Li, Zheng ; Verbitskaya, E. ; Eremin, V. ; Ivanov, A. ; Härkönen, J. ; Tuovinen, E. ; Luukka, P.

Author_Institution

Brookhaven Nat. Lab., Upton, NY

Volume

2

fYear

2005

fDate

23-29 Oct. 2005

Firstpage

1106

Lastpage

1111

Abstract

A new approach to improve Si detector radiation hardness/tolerance, termed as DRIVE (detector recovery/improvement via elevated-temperature-annealing), has been realized by annealing of oxygen-rich (magnetic CZ, MCZ), proton-irradiated Si detectors (with negative space charge before annealing) at medium temperature for a few hours. The DRIVE approach has been proved to lead to the dramatic decrease in detector leakage current, decrease in detector negative space charge concentration, and an eventual space charge sign inversion from negative to positive. Defect studies have shown significant reduction in overall defect concentrations after annealing

Keywords

annealing; radiation effects; silicon radiation detectors; SLHC; Si detector applications; Si detector radiation hardness; Si detector radiation tolerance; detector leakage current; detector negative space charge concentration; detector recovery/improvement-via-elevated-temperature-annealing; magnetic CZ; oxygen-rich Si detector; proton-irradiated Si detector; space charge sign inversion; Annealing; Degradation; Large Hadron Collider; Leak detection; Leakage current; Physics; Radiation detectors; Silicon radiation detectors; Space charge; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2005 IEEE

Conference_Location

Fajardo

ISSN

1095-7863

Print_ISBN

0-7803-9221-3

Type

conf

DOI

10.1109/NSSMIC.2005.1596445

Filename

1596445