DocumentCode
452237
Title
10 Gb/s Uncooled Laser Diodes for Datacommunication Applications
Author
Meliga, M.
Author_Institution
Aglteni Technol., Torino
Volume
2
fYear
2002
fDate
8-12 Sept. 2002
Firstpage
1
Lastpage
2
Abstract
Uncooled DFB lasers directly modulated at 10 Gb/s are key devices for optical communication systems operating at 10 Gb/s, such as 10 Gbit Ethernet, since their effective use in optical transceivers to reduce cost, size and power corruption. The paper describes the current status of these devices as well as our very recent results, Combining an optimised active region based on InGaAsP of strained MQW (multi quantum well) and a low parasitic internal optimised active region, we have fabricated 10 Gb directly modulated uncooled DFB lasers which work up to 100degC (chip temperature), with eye diagram perfectly open (showing extinction ratio > 5 dB), and bit error rate over 10 km without error floor
Keywords
III-V semiconductors; error statistics; gallium arsenide; indium compounds; optical communication equipment; optical fabrication; optical modulation; quantum well lasers; transceivers; 10 Gbit/s; 10 km; Ethernet; InGaAsP; bit error rate; chip temperature; direct modulation; extinction ratio; optical transceivers; uncooled laser diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication, 2002. ECOC 2002. 28th European Conference on
Conference_Location
Copenhagen
Print_ISBN
87-90974-63-8
Type
conf
Filename
1601027
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