Title :
Static Nonlinearity in Graphene Field Effect Transistors
Author :
Rodriguez, Saul ; Smith, A. ; Vaziri, S. ; Ostling, Mikael ; Lemme, M.C. ; Rusu, Ana
Author_Institution :
Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Stockholm, Sweden
Abstract :
The static linearity performance metrics of the graphene-based field effect transistor (GFET) transconductor are studied and modeled. Closed expressions are proposed for second- and third-order harmonic distortion (HD2, HD3), second-and third-order intermodulation distortion (ΔIM2, ΔIM3), and secondand third-order intercept points (AIIP2, AIIP3). The expressions are validated through large-signal simulations using a GFET VerilogA analytical model and a commercial circuit simulator. The proposed expressions can be used during circuit design to predict the GFET biasing conditions at which linearity requirements are met.
Keywords :
field effect transistors; graphene; harmonic distortion; intermodulation distortion; network synthesis; ΔIM2; ΔIM3; AIIP2; AIIP3; GFET VerilogA analytical model; GFET biasing conditions; GFET transconductor; HD2; HD3; circuit design; commercial circuit simulator; graphene field effect transistors; graphene-based field effect transistor transconductor; large-signal simulations; linearity requirement; second-order harmonic distortion; second-order intercept point; second-order intermodulation distortion; static linearity performance metrics; static nonlinearity; third-order harmonic distortion; third-order intercept point; third-order intermodulation distortion; Graphene; Integrated circuit modeling; Linearity; Performance evaluation; Radio frequency; Transistors; Graphene-based field effect transistor (GFET); RF circuit; RF circuit.; nonlinearity;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2326887
