Static Nonlinearity in Graphene Field Effect Transistors

Author

Rodriguez, Saul ; Smith, A. ; Vaziri, S. ; Ostling, Mikael ; Lemme, M.C. ; Rusu, Ana

Author_Institution

Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Stockholm, Sweden

Volume

61

Issue

8

fYear

2014

fDate

Aug. 2014

Firstpage

3001

Lastpage

3003

Abstract

The static linearity performance metrics of the graphene-based field effect transistor (GFET) transconductor are studied and modeled. Closed expressions are proposed for second- and third-order harmonic distortion (HD2, HD3), second-and third-order intermodulation distortion (ΔIM2, ΔIM3), and secondand third-order intercept points (AIIP2, AIIP3). The expressions are validated through large-signal simulations using a GFET VerilogA analytical model and a commercial circuit simulator. The proposed expressions can be used during circuit design to predict the GFET biasing conditions at which linearity requirements are met.

Keywords

field effect transistors; graphene; harmonic distortion; intermodulation distortion; network synthesis; ΔIM2; ΔIM3; AIIP2; AIIP3; GFET VerilogA analytical model; GFET biasing conditions; GFET transconductor; HD2; HD3; circuit design; commercial circuit simulator; graphene field effect transistors; graphene-based field effect transistor transconductor; large-signal simulations; linearity requirement; second-order harmonic distortion; second-order intercept point; second-order intermodulation distortion; static linearity performance metrics; static nonlinearity; third-order harmonic distortion; third-order intercept point; third-order intermodulation distortion; Graphene; Integrated circuit modeling; Linearity; Performance evaluation; Radio frequency; Transistors; Graphene-based field effect transistor (GFET); RF circuit; RF circuit.; nonlinearity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2326887

Filename

6828774