DocumentCode :
452345
Title :
Intersubband transitions with very low (fJ/ μm2) switching energy for all-optic switches: Design and realization
Author :
Gopal, A.V. ; Simoyama, T. ; Yoshida, Hiroyuki ; Mozume, T. ; Ishikawa, Hiroshi
Author_Institution :
Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba 300 2635 JAPAN, achanta@festa.or.jp
Volume :
3
fYear :
2002
fDate :
8-12 Sept. 2002
Firstpage :
1
Lastpage :
2
Abstract :
We demonstrate a very low, 3 fJ/μm2, switching energy for intersubband absorption saturation based all-optic switch in strained InGaAs/AlAsSb quantum wells at 1.68μm. We report experimental and theoretical estimates of saturation intensity in this material.
Keywords :
Communication switching; Design optimization; Dielectric constant; Dielectric materials; Electromagnetic wave absorption; Indium gallium arsenide; Indium phosphide; Pattern recognition; Switches; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Communication, 2002. ECOC 2002. 28th European Conference on
Conference_Location :
Copenhagen
Print_ISBN :
87-90974-63-8
Type :
conf
Filename :
1601146
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=452345
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