• DocumentCode
    452345
  • Title

    Intersubband transitions with very low (fJ/ μm2) switching energy for all-optic switches: Design and realization

  • Author

    Gopal, A.V. ; Simoyama, T. ; Yoshida, Hiroyuki ; Mozume, T. ; Ishikawa, Hiroshi

  • Author_Institution
    Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba 300 2635 JAPAN, achanta@festa.or.jp
  • Volume
    3
  • fYear
    2002
  • fDate
    8-12 Sept. 2002
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate a very low, 3 fJ/μm2, switching energy for intersubband absorption saturation based all-optic switch in strained InGaAs/AlAsSb quantum wells at 1.68μm. We report experimental and theoretical estimates of saturation intensity in this material.
  • Keywords
    Communication switching; Design optimization; Dielectric constant; Dielectric materials; Electromagnetic wave absorption; Indium gallium arsenide; Indium phosphide; Pattern recognition; Switches; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communication, 2002. ECOC 2002. 28th European Conference on
  • Conference_Location
    Copenhagen
  • Print_ISBN
    87-90974-63-8
  • Type

    conf

  • Filename
    1601146
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=452345