• DocumentCode
    45248
  • Title

    Coding schemes for multi-level flash memories that are intrinsically resistant against unknown gain and/or offset using reference symbols

  • Author

    Immink, K.A.S.

  • Author_Institution
    Turing Machines Inc., Rotterdam, Netherlands
  • Volume
    50
  • Issue
    1
  • fYear
    2014
  • fDate
    January 2 2014
  • Firstpage
    20
  • Lastpage
    22
  • Abstract
    Coding schemes for storage channels, such as optical recording and non-volatile memory (Flash), with unknown gain and offset are presented. In its simplest case, the coding schemes guarantee that a symbol with a minimum value (floor) and a symbol with a maximum (ceiling) value are always present in a codeword so that the detection system can estimate the momentary gain and the offset. The results of the computer simulations show the performance of the new coding and detection methods in the presence of additive noise.
  • Keywords
    encoding; flash memories; coding schemes; gain; intrinsically resistant; multilevel flash memories; offset; reference symbols;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2013.3558
  • Filename
    6698936