DocumentCode
45248
Title
Coding schemes for multi-level flash memories that are intrinsically resistant against unknown gain and/or offset using reference symbols
Author
Immink, K.A.S.
Author_Institution
Turing Machines Inc., Rotterdam, Netherlands
Volume
50
Issue
1
fYear
2014
fDate
January 2 2014
Firstpage
20
Lastpage
22
Abstract
Coding schemes for storage channels, such as optical recording and non-volatile memory (Flash), with unknown gain and offset are presented. In its simplest case, the coding schemes guarantee that a symbol with a minimum value (floor) and a symbol with a maximum (ceiling) value are always present in a codeword so that the detection system can estimate the momentary gain and the offset. The results of the computer simulations show the performance of the new coding and detection methods in the presence of additive noise.
Keywords
encoding; flash memories; coding schemes; gain; intrinsically resistant; multilevel flash memories; offset; reference symbols;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2013.3558
Filename
6698936
Link To Document