Title :
Small-chirp 40Gbps EA modulator with novel tensile-strained asymmetric quantum well absorption layer
Author :
Miyazaki, Yasunori ; Tada, Hitoshi ; Tokizaki, S. ; Takagi, Kazuhisa ; Hanamaki, Yoshihiko ; Aoyagi, Toshitaka ; Mitsui, Yasuo
Author_Institution :
High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Kanagawa
Abstract :
We demonstrate small chirp 40 Gbps electroabsorption modulator (EAM) with tensile-strained asymmetric quantum well absorption layer. Clear eye opening and small chirp (a<1) were achieved under high input power (+15 dBm) condition for the first time
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; semiconductor quantum wells; tensile strength; 40 Gbit/s; InGaAsP-InGaAsP; electroabsorption modulator; small-chirp EA modulator; tensile-strained asymmetric quantum well absorption layer;
Conference_Titel :
Optical Communication, 2002. ECOC 2002. 28th European Conference on
Conference_Location :
Copenhagen
Print_ISBN :
87-90974-63-8
