Physics based modeling and simulation of hetero material asymmetric gate stack epi (HEMAGASE)-MOSFET

Author

Gupta, R.S. ; Goel, Kirti ; Saxena, Manoj ; Gupta, Mridula

Author_Institution

Dept. of Electron. Sci., Delhi South Campus Univ., New Delhi, India

Volume

2

fYear

2005

fDate

4-7 Dec. 2005

Abstract

Two dimensional analytical modeling and simulation of a new device architecture-hetero material asymmetric gate stack epi (HEMAGASE) MOSFET is presented for short channel lengths. We have studied the various possible structures of asymmetric gate oxide stack MOSFET with heteromaterial gate and made a comparison between them. The model proposed is capable of modeling electrical characteristics like surface potential, electric field and threshold voltage. ATLAS, 2-D device simulator is used, over a wide range of parameters and bias conditions to validate the analytical results.

Keywords

MOSFET; semiconductor device models; 2D device simulator; ATLAS; HEMAGASE MOSFET; asymmetric gate oxide stack MOSFET; electrical characteristics; hetero material gate; heteromaterial asymmetric gate stack epi; short channel lengths; Analytical models; Boundary conditions; Doping; Electric potential; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Physics; Semiconductor process modeling; Substrates; ATLAS: device simulation software; Asymmetric Gate Stack; Hetero material gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606400

Filename

1606400