Title :
2.45GHz RF power amplifier with T/R switch
Author :
Hu, C.H. ; Do, M.A. ; Ma, J.G. ; Yeo, K.S.
Author_Institution :
Center for Integrated Circuits & Syst., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
In this paper, a 2.45GHz PA combined with a T/R switch has been designed and fabricated using a 0.35μm SiGe process. It shows a very good performance of about 20dBm output power, 18.3% power efficiency including the insertion loss of T/R switch, 1.5dB insertion loss in the receiving mode, and more than 30dB isolation. It´s applicable to 2.45GHz ISM (industrial, scientific, and medical) applications.
Keywords :
Ge-Si alloys; field effect transistor switches; power amplifiers; radiofrequency amplifiers; 0.35 micron; 1.5 dB; 18.3 percent; 2.45 GHz; RF power amplifier; SiGe; T/R switch; Communication switching; Costs; Impedance; Insertion loss; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Switches; Transceivers;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606444
