Title :
Effects of hot carrier stress and oxide breakdown on RF characteristics of MOSFETs
Author :
Chen, Kun-Ming ; Yang, Dao-Yen ; Huang, Sheng-Yi ; Huang, Guo-Wei ; Chang, Li-Hsin ; Liang, Victor ; Tseng, Hua-Chou ; Chang, Chun-Yen
Author_Institution :
National Nano Device Labs., Taiwan, China
Abstract :
Effects of hot carrier stress and oxide breakdown on the main figures-of-merit of RF MOSFETs are examined in this paper. We found that the degradations of cutoff frequency and power performance after hot carrier stress are larger than that after oxide breakdown. However, the minimum noise figure degradation is more significant after oxide breakdown. Those observations are important and should be concerned when designing an RF front-end circuit.
Keywords :
MOSFET; hot carriers; semiconductor device breakdown; semiconductor device models; RF MOSFET; RF front-end circuit; cutoff frequency degradation; hot carrier stress; noise figure degradation; oxide breakdown; power performance degradation; Breakdown voltage; CMOS technology; Degradation; Electric breakdown; Hot carriers; MOSFETs; Noise figure; Radio frequency; Semiconductor device noise; Stress;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606451
