Title :
High linearity SPDT switch for dual band wireless LAN applications
Author :
Lee, Kang-Ho ; Jin, Zhejun ; Koo, Kyung-Heon
Author_Institution :
Dept. of Electron. Eng., Incheon Univ., South Korea
Abstract :
This paper presents a high linear and power-handling single-pole double-throw (SPDT) switch for WLAN 802.11 a/b/g applications. The switch circuit has asymmetric and stacked topology to have high power-handling and linearity for the Tx path. This SPDT switch has been implemented with 0.25 μm GaAs pHEMT process by ETRI. The designed SPDT switch has the measured insertion loss of better than 1dB and isolation of better than 40dB for the Tx path and 25dB for the Rx path and the high power handling capability with P1dB of about 23dBm with control voltage of -3/0 V. The fabricated SPDT switch chip size is 1.8 mm × 1.8 mm.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC; gallium arsenide; microwave switches; wireless LAN; 0.25 micron; 1.8 mm; GaAs; MMIC; Rx path; Tx path; WLAN 802.11 a/b/g applications; asymmetric topology; dual band wireless LAN applications; high linearity SPDT switch; insertion loss; pHEMT process; single-pole double-throw; stacked topology; switch circuit; Circuit topology; Dual band; Gallium arsenide; Linearity; Loss measurement; PHEMTs; Power measurement; Switches; Switching circuits; Wireless LAN; MMIC; SPDT; pHEMT; switch;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606461