• DocumentCode
    453127
  • Title

    An analysis of base current effect on the anomalous dip of scattering parameter S12 in SiGe HBTs

  • Author

    Chen, Han-Yu ; Chen, Kun-Ming ; Huang, Guo-Wei ; Chang, Chun-Yen

  • Author_Institution
    Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    2
  • fYear
    2005
  • fDate
    4-7 Dec. 2005
  • Abstract
    In this paper, the anomalous dip in scattering parameters S12 of SiGe HBTs is explained quantitatively for the first time. It was found that under constant collector-emitter voltage (VCE), an increase of base current (which corresponds to an increase of base-emitter capacitance (Cπ) enhances the anomalous dip.
  • Keywords
    Ge-Si alloys; S-parameters; heterojunction bipolar transistors; microwave bipolar transistors; S-parameters; SiGe; anomalous dip; base current effect; constant collector-emitter voltage; heterojunction bipolar transistor; scattering parameter; Electronics packaging; Feedback circuits; Germanium silicon alloys; Heterojunction bipolar transistors; MOSFETs; Microwave devices; Microwave transistors; Scattering parameters; Silicon germanium; Voltage; Anomalous dip; S-parameters; SiGe; base current; heterojunction bipolar transistor (HBT);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
  • Print_ISBN
    0-7803-9433-X
  • Type

    conf

  • DOI
    10.1109/APMC.2005.1606462
  • Filename
    1606462
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=453127