Title :
On the doping effects for linearity improvement of InGaP/InGaAs PHEMT
Author :
Lin, Yueh-Chin ; Chang, J.W. ; Yi Chang, E. ; Chang, X.Y.
Author_Institution :
Dept. of Mater. Sci. & Eng., National Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, doping effects for linearity improvement of InGaP/InGaAs PHEMT devices are discussed. The doping techniques of interest are the light channel doping and the uniform doping introduced to the conventional 5-doped PHEMT structure. Circuit analysis is performed for estimation of the third-order intermodulation distortion levels (IM3). The linearity performance is compared through the extracted parameters from measurement.
Keywords :
III-V semiconductors; equivalent circuits; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; intermodulation distortion; semiconductor doping; 5-doped PHEMT structure; InGaP-InGaAs; PHEMT devices; circuit analysis; doping effects; light channel doping; linearity improvement; third-order intermodulation distortion; uniform doping; Circuit analysis; Doping; Gallium arsenide; Gold; Indium gallium arsenide; Intermodulation distortion; Linearity; PHEMTs; Voltage; Wireless communication; IM3; InGaP/InGaAs; PHEMT; channel doped; uniform doping;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606466
