12-channel, 30Gb/s monolithic integrated front-end amplifier for parallel optical communication

Author

Zhaofeng, Xue ; Zhiqun, Li ; Zhigong, Wang

Author_Institution

Inst. of RF- & OE - ICs, Southeast Univ., Nanjing, China

Volume

2

fYear

2005

fDate

4-7 Dec. 2005

Abstract

A 12-channel, 30Gb/s monolithic integrated front-end amplifier for parallel optical communication application is presented in this paper. The chip was designed and fabricated in 0.18-μm CMOS technology. The capacitance of photodiode is 2pF, each channel is designed to work at 2.5Gb/s and contains a trans-impedance amplifier (TIA) and a limiting amplifier (LA). With the power supply of 1.8V, each channel consumes 85mW, and provides 578 mV differential outputs. Total power consumption of 12 channels is about 1.02W. Details of the chip design, layout and measured results are described below.

Keywords

CMOS integrated circuits; amplifiers; limiters; optical communication equipment; photodiodes; 0.18 micron; 2 pF; 2.5 Gbit/s; 30 Gbit/s; 578 mV; 85 mW; CMOS technology; chip design; differential outputs; limiting amplifier; monolithic integrated front-end amplifier; parallel optical communication; photodiode; power consumption; trans-impedance amplifier; CMOS technology; Capacitance; Chip scale packaging; Energy consumption; Optical amplifiers; Optical fiber communication; Photodiodes; Power supplies; Semiconductor device measurement; Semiconductor optical amplifiers; coupling Noise; deep-n-well; front-end amplifier; guard-ring; regulated-cascode;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606495

Filename

1606495