K-band BiCMOS SiGe based micromixer with enhanced linearity performances

Author

Do, Minh-Nhut ; Dubuc, David ; Coustou, Anthony ; Tournier, Eric ; Plana, Robert

Author_Institution

LAAS-CNRS, Toulouse, France

Volume

3

fYear

2005

fDate

4-7 Dec. 2005

Abstract

A theoretical analysis and design methodology of a K-band micromixer structure are presented in this paper. Excellent linearity is observed from the measurements for a moderated supply current (Ic). In the optimum conditions, local oscillator power P_LO = -2dBm and bias current Ic = 25mA, the third intercept point referred to the output (OIP3) and the differential conversion gain (Gc) are respectively measured at +12dBm and +7.7dB. The fabricated mixer is integrated using a SiGe technology and the entire chip occupies an area of 3.6 mm² mainly due to extra LC filters which improve RF performances.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; microwave mixers; 25 mA; K-band BiCMOS based micromixer; LC filters; SiGe; differential conversion gain; local oscillator power; supply current; BiCMOS integrated circuits; Current measurement; Current supplies; Design methodology; Germanium silicon alloys; K-band; Linearity; Local oscillators; Power measurement; Silicon germanium; BiCMOS-SiGe; K-band; Linearity; Micromixer;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606603

Filename

1606603