DocumentCode
453263
Title
A global ADI-FDTD modeling of microwave active circuits
Author
Zheng, Yang-ming ; Chu, Qing-xin
Author_Institution
Coll. of Electron. & Inf. Eng., South China Univ. of Technol., Guangdong, China
Volume
3
fYear
2005
fDate
4-7 Dec. 2005
Abstract
A novel global FDTD scheme based on drift-diffuse model of semiconductor combined alternating direction implicit finite-difference time-domain (ADI-FDTD) method is presented. Although it is some complicated, the proposed method can reduce computation time by increasing time increment. Main features of the method are demonstrated by simulation of a distributed diode switch.
Keywords
active networks; finite difference time-domain analysis; microwave circuits; semiconductor device models; alternating direction implicit finite-difference time-domain; distributed diode switch; drift-diffuse model; global ADI-FDTD modeling; microwave active circuits; Active circuits; Circuit simulation; Computational modeling; Current density; Finite difference methods; Maxwell equations; Microwave circuits; Microwave theory and techniques; Switches; Time domain analysis; ADI-FDTD method; global model; microwave circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN
0-7803-9433-X
Type
conf
DOI
10.1109/APMC.2005.1606669
Filename
1606669
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