• DocumentCode
    453425
  • Title

    GaAs distributed amplifiers with up to 350 GHz gain-bandwidth product for 40 Gb/s LiNbO3 modulator drivers

  • Author

    Häfele, M. ; Beilenhoff, K. ; Schumacher, H.

  • Author_Institution
    Dept. of Electron Devices & Circuits, Ulm Univ., Germany
  • Volume
    1
  • fYear
    2005
  • fDate
    4-6 Oct. 2005
  • Abstract
    In this paper, we report on two Distributed Amplifier (DA) concepts for 40 Gb/s modulator drivers. Both amplifiers are fabricated in a commercially available 150 nm GaAs power pHEMT technology. The first DA is a six stages design with capacitive division on the gate line. Gain and bandwidth of this amplifier equal to 13.2 dB and 41 GHz, respectively. The other DA consists of nine cascode stages, achieving 20.1 dB gain and a bandwidth of 34.5 GHz. Output power of the two amplifiers is higher than 21 dBm or 7 Vpp up to 20 GHz, which makes them suitable for driving lithium-niobate (LiNbO3) modulators.
  • Keywords
    distributed amplifiers; driver circuits; gallium arsenide; lithium compounds; modulators; monolithic integrated circuits; niobium compounds; power HEMT; power integrated circuits; 13.2 dB; 150 nm; 20.1 dB; 34.5 GHz; 40 Gbit/s; 41 GHz; GaAs; LiNbO3; distributed amplifiers; gain bandwidth product; gallium arsenide amplifier; high electron mobility transistors; lithium niobate modulators; modulator drivers; power pHEMT technology; Bandwidth; Distributed amplifiers; Driver circuits; FETs; Frequency; Gallium arsenide; PHEMTs; Power amplifiers; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2005 European
  • Print_ISBN
    2-9600551-2-8
  • Type

    conf

  • DOI
    10.1109/EUMC.2005.1608809
  • Filename
    1608809
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=453425