Title :
Power amplifier characterization: an active load-pull system based on six-port reflectometer using complex modulated carrier
Author :
Bensmida, S. ; Bergeault, E. ; Abib, G.I. ; Huyart, B.
Author_Institution :
Departement COMELEC, Ecole Nationale Superieure des Telecommun., Paris, France
Abstract :
An original measurement system for nonlinear RF power-transistor characterization is presented. This new setup enables measurement and optimization of output power, power added efficiency (PAE) or linearity using active fundamental tuning and six-port reflectometers as vector network analyzers. High and low frequency bias-Tees are inserted at both ports of transistors in order to control source and load impedances at the base-band (envelope) frequency. Experimental results at 1.575 GHz, show an ACPR improvement of 20 dB for a commercial GaAs MESFET power transistor.
Keywords :
III-V semiconductors; gallium arsenide; microwave power amplifiers; power MESFET; reflectometers; 1.575 GHz; GaAs; MESFET power transistor; active fundamental tuning; active load-pull system; bias-Tees; complex modulated carrier; nonlinear RF power-transistor; power added efficiency; power amplifier characterization; six-port reflectometer; vector network analyzers; Gallium arsenide; Impedance; Linearity; MESFETs; Power amplifiers; Power generation; Power measurement; Radio frequency; Radiofrequency amplifiers; Tuning;
Conference_Titel :
Microwave Conference, 2005 European
Print_ISBN :
2-9600551-2-8
DOI :
10.1109/EUMC.2005.1608931
