• DocumentCode
    453495
  • Title

    Coplanar ferroelectric phase shifter on silicon substrate with TiO2 buffer layer

  • Author

    Kim, Ki-Byoung ; Yun, Tae-Soon ; Kim, Hyun-Suk ; Kim, Il-Doo ; Kim, Ho-Gi ; Lee, Jong-Chul

  • Author_Institution
    RFIC Center, Kwangwoon Univ., Seoul, South Korea
  • Volume
    1
  • fYear
    2005
  • fDate
    4-6 Oct. 2005
  • Abstract
    In this paper, a BST coplanar phase shifter with differential phase shift of 98° at 50 V and FoM of 46.7°/dB has been realized. The potential feasibility of integrating BST films into Si substrate as microwave phase shifter and/or coplanar waveguide tunable devices with TiO2 thin film buffer layer has been successfully demonstrated. TiO2 as buffer layer has been successfully grown onto Si substrate by ALD (atomic layer deposition).
  • Keywords
    atomic layer deposition; buffer layers; coplanar waveguides; microwave phase shifters; silicon; titanium compounds; 50 V; BST coplanar phase shifter; TiO2; atomic layer deposition; buffer layer; coplanar ferroelectric phase shifter; coplanar waveguide tunable device; microwave phase shifter; Binary search trees; Buffer layers; Coplanar waveguides; Ferroelectric films; Ferroelectric materials; Microwave devices; Phase shifters; Semiconductor films; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2005 European
  • Print_ISBN
    2-9600551-2-8
  • Type

    conf

  • DOI
    10.1109/EUMC.2005.1608940
  • Filename
    1608940
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=453495