DocumentCode
453500
Title
Monolithic integration of an antenna with a 24 GHz image-rejection receiver in SiGe HBT technology
Author
Öjefors, Erik ; Sönmez, Ertugrul ; Chartier, Sébastien ; Lindberg, Peter ; Rydberg, Anders ; Schumacher, Hermann
Author_Institution
Signals & Syst. Group, Uppsala Univ., Sweden
Volume
1
fYear
2005
fDate
4-6 Oct. 2005
Abstract
The integration of an on-chip dipole antenna with a monolithic 24 GHz receiver manufactured in a 0.8 μm SiGe HBT process is presented. A high resistivity silicon substrate (1000 Ωcm) is used for the implemented circuit to improve the efficiency of the on-chip antenna. The receiver, including the receive and an optional transmit antenna, requires a chip area of 7.3 mm and delivers 33 dB conversion gain at 24 GHz.
Keywords
Ge-Si alloys; bipolar MMIC; microwave antennas; microwave receivers; 0.8 micron; 24 GHz; 33 dB; HBT technology; SiGe; image-rejection receiver; microwave antenna; microwave receiver; monolithic integration; monolithic receiver; on-chip antenna; on-chip dipole antenna; silicon substrate; Conductivity; Dipole antennas; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Manufacturing processes; Monolithic integrated circuits; Receiving antennas; Silicon germanium; Transmitting antennas;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2005 European
Print_ISBN
2-9600551-2-8
Type
conf
DOI
10.1109/EUMC.2005.1608947
Filename
1608947
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