Reliability evaluation of 5.2GHz CMOS receiver

Author

Lin, Wei-Cheng ; King, Ya-Chin

Author_Institution

Dept. of Electr. Eng., Nat. Tsing-Hua Univ., Hsin-Chu, Taiwan

Volume

2

fYear

2005

fDate

4-6 Oct. 2005

Abstract

A receiver´s reliability evaluation in relation to its circuit block degradation is investigated with our previously proposed device degradation sub-circuit model. The receiver´s performances are analyzed using both the analog parameters and digital parameters. The analog signal and digital signal degradation are monitored through two figure of merits parameters, SFDR and EVM, respectively. This work suggests that the hot-carrier induced LNA degradation leads to the SFDR degradation, meanwhile, causing EVM to decrease significantly. The VCO performance degradation results in minor impact on SFDR, but strong effects on the EVM.

Keywords

CMOS integrated circuits; MMIC; low noise amplifiers; microwave receivers; radio receivers; reliability; voltage-controlled oscillators; 5.2 GHz; CMOS receiver reliability; EVM parameter; SFDR degradation; VCO performance degradation; analog parameters; analog signal degradation; circuit block degradation; device degradation sub-circuit model; digital parameters; digital signal degradation; hot-carrier induced LNA; CMOS process; CMOS technology; Capacitance; Circuits; Condition monitoring; Cutoff frequency; Degradation; Radio frequency; Stress; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1610035

Filename

1610035