DocumentCode :
453552
Title :
Investigation of longitudinal drift waves in semiconducting multilayered structure
Author :
Shramkova, O.V. ; Bulgakov, A.A.
Author_Institution :
Inst. of Radiophys. & Electron., Ukraine Nat. Acad. of Sci., Kharkov, Ukraine
Volume :
2
fYear :
2005
fDate :
4-6 Oct. 2005
Abstract :
The effect of carrier drift on the dispersion properties and instability of longitudinal drift waves in infinite layered periodic structures is considered. We investigate the periodic structure composed of alternating layers of electron and hole semiconductors. It is assumed that the thickness of layers less than length of electromagnetic wave. In this case we can consider the structure as two-component plasma. It was shown that the plasma properties of the structure depend on the thicknesses of layers. The instability increments for the drift waves are determined.
Keywords :
dispersion (wave); drift instability; electromagnetic waves; multilayers; plasma drift waves; semiconductor materials; semiconductors; carrier drift effect; dispersion properties; electromagnetic wave; electron semiconductors; hole semiconductors; infinite layered periodic structures; instability; longitudinal drift waves; semiconducting multilayered structure; two-component plasma; Charge carrier processes; Electromagnetic scattering; Frequency; Hydrodynamics; Maxwell equations; Periodic structures; Plasma properties; Plasma waves; Semiconductivity; Solid state circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2005 European
Print_ISBN :
2-9600551-2-8
Type :
conf
DOI :
10.1109/EUMC.2005.1610122
Filename :
1610122
Link To Document :
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