• DocumentCode
    453567
  • Title

    Large-signal PIN diode model for ultra-fast photodetectors

  • Author

    Fritsche, Carsten ; Krozer, Viktor

  • Author_Institution
    Dept. of Electromagn. Syst., Denmark Tech. Univ., Lyngby, Denmark
  • Volume
    2
  • fYear
    2005
  • fDate
    4-6 Oct. 2005
  • Abstract
    A large-signal model for PIN photodetector is presented, which can be applied to ultra-fast photodetection and THz signal generation. The model takes into account the tunnelling and avalanche breakdown, which is important for avalanche photodiodes. The model is applied to ultra-fast superlattice photodiodes for THz signal generation. Results show that the output power at THz frequencies is in the order of tens of μW. The embedding impedances are found to be as low as 13Ω.
  • Keywords
    avalanche photodiodes; p-i-n photodiodes; photodetectors; semiconductor device models; semiconductor superlattices; tunnelling; PIN photodetector; THz signal generation; avalanche breakdown; avalanche photodiodes; embedding impedances; large-signal PIN diode model; tunnelling; ultra-fast photodetection; ultra-fast photodetectors; ultra-fast superlattice photodiodes; Avalanche photodiodes; Charge carrier processes; Circuit simulation; Equations; Frequency; Impedance; PIN photodiodes; Photodetectors; Signal generators; Superlattices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2005 European
  • Print_ISBN
    2-9600551-2-8
  • Type

    conf

  • DOI
    10.1109/EUMC.2005.1610152
  • Filename
    1610152