Title :
Test and Analysis of the ESD Robustness for the Diode-Connected a-IGZO Thin Film Transistors
Author :
Ya-Hsiang Tai ; Hao-Lin Chiu ; Lu-Sheng Chou
Author_Institution :
Dept. of Photonics & Display Inst., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this work, wafer level TLP testing is applied to amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) to study the factors of their electrostatic discharge (ESD) robustness. Two kinds of TFTs with N2O and O2 treatments are subject to the ESD test. It is found that the contact resistance of the TFTs, instead of the channel quality, dominates the ESD power for them to be damaged.
Keywords :
amorphous state; contact resistance; electrostatic discharge; gallium compounds; indium compounds; semiconductor device testing; semiconductor materials; thin film transistors; ESD; InGaZnO; TFT; a-IGZO thin film transistors; amorphous indium-gallium-zinc-oxide; contact resistance; diode-connected thin film transistors; electrostatic discharge; transmission line pulsing; wafer level TLP testing; Electrostatic discharges; Logic gates; Robustness; Stress; Testing; Thin film transistors; Amorphous Indium–Gallium–Zinc Oxide thin film transistor (a-IGZO TFT); electrostatic discharge (ESD);
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2013.2257680
