Title :
A 10-GHz 15-dB Four-Stage Distributed Amplifier in 0.18 μm CMOS Process
Author :
Moez, K.K. ; Elmasry, M.I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont.
Abstract :
This paper presents a four-stage CMOS distributed amplifier (DA) design implemented in standard 0.18 mum CMOS technology. The proposed design eliminates the need for transmission line capacitors and, consequently, uses significantly smaller spiral inductors compared with the previous designs. Using the minimum size inductor, the bandwidth of the amplifiers is extended, and the quality factors of the on-chip inductor are improved. Proposed DA occupies the smallest die area (0.3mum*0.8mum) amongst the DAs reported with the same performance. A unity gain bandwidth of 10 GHz and a gain of 15 dB are measured. DC power dissipation is 56 mW
Keywords :
CMOS analogue integrated circuits; capacitors; distributed amplifiers; inductors; integrated circuit design; transmission lines; 0.18 micron; 0.3 micron; 0.8 micron; 10 GHz; 15 dB; 56 mW; CMOS distributed amplifier; four stage distributed amplifier; on-chip inductor; quality factor; spiral inductors; transmission line capacitors; Bandwidth; CMOS process; CMOS technology; Capacitors; Distributed amplifiers; Gain; Inductors; Power transmission lines; Q factor; Spirals;
Conference_Titel :
Design, Automation and Test in Europe, 2006. DATE '06. Proceedings
Conference_Location :
Munich
Print_ISBN :
3-9810801-1-4
DOI :
10.1109/DATE.2006.243766
