Performance Enhancement of Blue InGaN Light-Emitting Diodes With InGaN Barriers and Dip-Shaped Last Barrier

Author

Jian-Yong Xiong ; Shu-Wen Zheng ; Guang-Han Fan

Author_Institution

Lab. of Nanophotonic Functional Mater. & Devices, South China Normal Univ., Guangzhou, China

Volume

60

Issue

11

fYear

2013

fDate

Nov. 2013

Firstpage

3925

Lastpage

3929

Abstract

The characteristics of blue InGaN light-emitting diodes (LEDs) with InGaN barriers and dip-shaped last barrier are investigated numerically. The simulation results show that the newly designed LEDs have a better performance over the conventional InGaN/GaN and InGaN/InGaN counterparts attributed to the enhancement of carriers confinement induced by the improved potential barrier height for electrons and holes, and the amelioration of electron-hole spatial overlap caused by the reduced polarization effect between the well and barrier. In addition, the efficiency droop and the radiative recombination rate are markedly improved by employing the LEDs with InGaN barriers and dip-shaped last barrier.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; InGaN; InGaN barriers; LED; blue InGaN light-emitting diodes; dip-shaped last barrier; efficiency droop; electron-hole spatial overlap; performance enhancement; radiative recombination rate; reduced polarization effect; Aluminum gallium nitride; Charge carrier processes; Electrostatics; Gallium nitride; Light emitting diodes; Optical polarization; Radiative recombination; Efficiency droop; InGaN barriers; light-emitting diodes (LEDs); numerical simulation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2282218

Filename

6626598