Title :
Recent Progress in Development of GaInNAs- Based Photonic Devices
Author :
Konttinen, Janne ; Tuomisto, Pietari ; Guina, Mircea ; Pessa, Markus
Author_Institution :
Optoelectron. Res. Center, Tampere Univ. of Technol.
Abstract :
The GaInNAs/GaAs semiconductor heterostructures have emerged as promising alternatives to InP-based compound semiconductors for the fabrication of 1.3-mum METRO and LAN telecommunications lasers. We shall review the recent advances made in the field of the GaInNAs technology. An emphasis is put on the development of low-threshold double-quantum-well (DQW) and triple-quantum-well (TQW) ridge waveguide lasers (RWG) grown by molecular beam epitaxy. A record slope efficiency of 0.28 W/A and a low threshold current density of 278 A/cm2/QW are demonstrated in this paper for the TQW single-mode lasers. We shall also discuss the first measurements of electron-spin relaxation in dilute nitride quantum-wells. Excitation of spin-polarized electrons is potentially attractive for implementing all-optical polarization switches in a broad wavelength range
Keywords :
III-V semiconductors; electron spin polarisation; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical communication equipment; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 1.3 mum; GaInNAs-GaAs; GaInNAs/GaAs semiconductor heterostructures; LAN; METRO; all-optical polarization switch; current density; double-quantum-well ridge waveguide lasers; electron-spin relaxation; molecular beam epitaxy; slope efficiency; spin-polarized electrons; triple-quantum-well ridge waveguide lasers; Gallium arsenide; Local area networks; Molecular beam epitaxial growth; Optical device fabrication; Quantum well lasers; Semiconductor lasers; Semiconductor waveguides; Threshold current; Waveguide lasers; Wavelength measurement; GaInNAs; molecular beam epitaxy; optical communication; polarization switch; semiconductor lasers;
Conference_Titel :
Transparent Optical Networks, 2006 International Conference on
Conference_Location :
Nottingham
Print_ISBN :
1-4244-0235-2
Electronic_ISBN :
1-4244-0236-0
DOI :
10.1109/ICTON.2006.248371
