DocumentCode :
458582
Title :
Continuous Band Heterostructures: A New Concept for Development of Low-Loss Distributed Bragg Reflectors for Optoelectronic Devices
Author :
Safonov, I.M. ; Sukhoivanov, I.A. ; Shulika, O.V. ; Dyomin, A.A. ; Yakushev, S.O. ; Klymenko, M.V. ; Petrov, S.I. ; Lysak, V.V.
Author_Institution :
Kharkov Nat. Univ. of Radio Electron.
Volume :
2
fYear :
2006
fDate :
18-22 June 2006
Firstpage :
193
Lastpage :
198
Abstract :
We found a new class of heterostructures which have no discontinuities for one of the band edges and, therefore, called continuous-band heterostructures (CBHs). The promising properties of CBHs are discussed by consideration of their optical and electrical characteristics. CBH-based DBRs provide extremely low series resistance in comparison with conventional DBRs even at low level of doping that can be uniform. Low level of doping leads to low absorption. The absence of composition grading and doping profiles can simplifies growth process. Results for some apt CBHs lattice-matched to GaAs are compared with those for conventional GaAs/AlAs structures
Keywords :
III-V semiconductors; distributed Bragg reflectors; doping profiles; gallium arsenide; semiconductor heterojunctions; band edges; continuous-band heterostructures; distributed Bragg reflectors; doping level; Distributed Bragg reflectors; Doping; Electric resistance; Lattices; Optical losses; Optical materials; Optical refraction; Optical superlattices; Optical variables control; Optoelectronic devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Transparent Optical Networks, 2006 International Conference on
Conference_Location :
Nottingham
Print_ISBN :
1-4244-0235-2
Electronic_ISBN :
1-4244-0236-0
Type :
conf
DOI :
10.1109/ICTON.2006.248372
Filename :
4013768
Link To Document :
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