• DocumentCode
    458643
  • Title

    ESD (Electrostatic Discharge) Protection Design for Nanoelectronics in CMOS Technology

  • Author

    Ming-Dou Ker

  • Author_Institution
    Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao Tung Univ., Hsinchu
  • fYear
    2006
  • fDate
    21-24 May 2006
  • Firstpage
    217
  • Lastpage
    279
  • Abstract
    In this tutorial, we teach useful on-chip ESD protection designs for CMOS integrated circuits. The contents include (1) introduction to electrostatic discharge, (2) design techniques of ESD protection circuit, (3) whole-chip ESD protection design, and (4) ESD protection for mixed-voltage I/O interface. The clear ESD protection design concepts and detailed circuit implementations are presented in this course. ESD protection design is more important in the nanoscale CMOS technology. High ESD robustness can not be achieved with only process solutions. The circuit design solutions should be added into the chips with suitable layout arrangement to achieve the purpose of whole-chip ESD protection for IC products
  • Keywords
    CMOS integrated circuits; electrostatic discharge; integrated circuit design; nanoelectronics; CMOS integrated circuit; circuit design solution; electrostatic discharge design; mixed-voltage I-O interface; nanoelectronics; on-chip ESD protection; Biological system modeling; CMOS integrated circuits; CMOS technology; Electrostatic discharge; Humans; Integrated circuit modeling; Nanoelectronics; Protection; Semiconductor process modeling; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Signal Processing, Circuits, and System Design Techniques for Communications, 2006
  • Conference_Location
    Kos
  • Print_ISBN
    1-4244-0460-6
  • Type

    conf

  • DOI
    10.1109/ASPCAS.2006.251127
  • Filename
    4016442