• DocumentCode
    459149
  • Title

    10, 5, 3, 2 Centimeter Wave Length Band High Power Transistors of R&PC «Istok»

  • Author

    Korolev, A. ; Klimova, A. ; Krasnik, V. ; Liapin, L. ; Malyshchik, V. ; Manchenko, L. ; Pchelin, V. ; Tregubov, V.

  • Author_Institution
    Fed. State Unitary Corp. R&PC "Istok", Fryazino
  • Volume
    1
  • fYear
    2006
  • fDate
    Sept. 2006
  • Firstpage
    167
  • Lastpage
    168
  • Abstract
    A series of high output power hermetically sealed, internally matched FETs for 10, 5, 3, 2 cm wave length band with output power higher than 10, 10, 5, 5 W, associated gain higher than 8, 7, 6 and 5 dB correspondently has been developed. FETs are designed for both continuous and pulse operation
  • Keywords
    microwave field effect transistors; power field effect transistors; 10 cm; 2 cm; 3 cm; 5 cm; FET; R&PC "Istok"; field effect transistor; power transistor; Gallium arsenide; Helium; IEEE catalog; Microwave FETs; Microwave technology; Organizing; Power transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    966-7968-92-8
  • Electronic_ISBN
    966-7968-92-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2006.256344
  • Filename
    4023649
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=459149