Title :
10, 5, 3, 2 Centimeter Wave Length Band High Power Transistors of R&PC «Istok»
Author :
Korolev, A. ; Klimova, A. ; Krasnik, V. ; Liapin, L. ; Malyshchik, V. ; Manchenko, L. ; Pchelin, V. ; Tregubov, V.
Author_Institution :
Fed. State Unitary Corp. R&PC "Istok", Fryazino
Abstract :
A series of high output power hermetically sealed, internally matched FETs for 10, 5, 3, 2 cm wave length band with output power higher than 10, 10, 5, 5 W, associated gain higher than 8, 7, 6 and 5 dB correspondently has been developed. FETs are designed for both continuous and pulse operation
Keywords :
microwave field effect transistors; power field effect transistors; 10 cm; 2 cm; 3 cm; 5 cm; FET; R&PC "Istok"; field effect transistor; power transistor; Gallium arsenide; Helium; IEEE catalog; Microwave FETs; Microwave technology; Organizing; Power transistors;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256344
