• DocumentCode
    459151
  • Title

    0.8-2.5 GHz SiC Power Amplifiers

  • Author

    Kistchinsky, A.

  • Author_Institution
    Microwave Syst. JSC, Moscow
  • Volume
    1
  • fYear
    2006
  • fDate
    Sept. 2006
  • Firstpage
    171
  • Lastpage
    172
  • Abstract
    This paper presents the results of elaboration of 0.8-2.5 GHz SiC-based amplifiers with output power 10 & 20 W at 1 dB gain compression, as well as efficient nonlinear model of CRF24010 (Cree Inc.) transistor, simulation results, design and experimental characteristics of two amplifier chains (single-ended and balanced). Both amplifiers have ultra-small sizes (4.8 and 9.6 cm2) and good electric performance
  • Keywords
    UHF power amplifiers; power transistors; silicon compounds; wide band gap semiconductors; 0.8 to 2.5 GHz; 10 W; 20 W; CRF24010 transistor; SiC; SiC power amplifier; nonlinear model; Gallium arsenide; Gallium nitride; Helium; IEEE catalog; Microwave technology; Organizing; Power amplifiers; Roentgenium; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    966-7968-92-8
  • Electronic_ISBN
    966-7968-92-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2006.256346
  • Filename
    4023651
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=459151