DocumentCode :
459153
Title :
L-Band Low Noise AlGaN/GaN HEMT
Author :
Abolduyev, I.M. ; Gladysheva, N.B. ; Dorofeev, A.A. ; Minnebaev, V.M. ; Tchernyavsky, A.A.
Author_Institution :
SRI "Pulsar", Moscow
Volume :
1
fYear :
2006
fDate :
Sept. 2006
Firstpage :
180
Lastpage :
180
Abstract :
This paper presents the results of design and manufacture of low noise AlGaN/GaN HEMT for L-band. It has NFmin<1.4 dB gain>15 dB at F=1.5 GHz. GaN HEMT has been designed and manufactured in SRI "Pulsar"
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device manufacture; 1.5 GHz; AlGaN-GaN; L-band; high electron mobility transistor; low noise HEMT; Aluminum gallium nitride; Artificial intelligence; Boolean functions; Data structures; Gallium nitride; HEMTs; Indium tin oxide; L-band; MOCVD; Microwave integrated circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
Type :
conf
DOI :
10.1109/CRMICO.2006.256351
Filename :
4023656
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=459153
بازگشت