Title :
GaAs Wideband Tw0-Stage Power Amplifier, Covering 8-18 GHZ Frequency Band
Author :
Zykova, G.S. ; Mjakishev, U.B. ; Rakov, Yu.N. ; Chibaev, V.P. ; Budakov, V.G.
Author_Institution :
Joint Stock Co. "Oktava", Novosibirsk
Abstract :
The results of the development of the wideband two-stage power amplifier (PA), covering 8-18 GHz frequency band with the saturated output power of 0.74-1.1 W and the gain of 6.9-8.6 dB, are presented. PA is realized with "the chip-on-the chip" (quasimonolithic) technology application. The PA and balanced PA (BPA) output characteristics are demonstrated
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium arsenide; wideband amplifiers; 0.74 to 1.1 W; 6.9 to 8.6 dB; 8 to 18 GHz; BPA; GaAs; balanced power amplifier; chip-on-chip technology application; wideband two-stage power amplifier; Broadband amplifiers; Frequency; Gallium arsenide; Helium; MMICs; Microwave technology; PHEMTs; Power amplifiers; Power generation; Topology;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-322-006-6
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256354
