DocumentCode
459155
Title
GaAs Wideband Tw0-Stage Power Amplifier, Covering 8-18 GHZ Frequency Band
Author
Zykova, G.S. ; Mjakishev, U.B. ; Rakov, Yu.N. ; Chibaev, V.P. ; Budakov, V.G.
Author_Institution
Joint Stock Co. "Oktava", Novosibirsk
Volume
1
fYear
2006
fDate
11-15 Sept. 2006
Firstpage
187
Lastpage
188
Abstract
The results of the development of the wideband two-stage power amplifier (PA), covering 8-18 GHz frequency band with the saturated output power of 0.74-1.1 W and the gain of 6.9-8.6 dB, are presented. PA is realized with "the chip-on-the chip" (quasimonolithic) technology application. The PA and balanced PA (BPA) output characteristics are demonstrated
Keywords
III-V semiconductors; MMIC power amplifiers; gallium arsenide; wideband amplifiers; 0.74 to 1.1 W; 6.9 to 8.6 dB; 8 to 18 GHz; BPA; GaAs; balanced power amplifier; chip-on-chip technology application; wideband two-stage power amplifier; Broadband amplifiers; Frequency; Gallium arsenide; Helium; MMICs; Microwave technology; PHEMTs; Power amplifiers; Power generation; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
966-322-006-6
Electronic_ISBN
966-7968-92-8
Type
conf
DOI
10.1109/CRMICO.2006.256354
Filename
4023659
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