Title :
Trench Power JFET with Integrated Junction Barrier Schottky Diode
Author :
Gao, Yang ; Huang, Alex Q. ; Gao, Yan
Author_Institution :
Semicond. Power Electron. Center, North Carolina State Univ., Raleigh, ND
Abstract :
A novel trench power JFET with integrated junction barrier Schottky (JBS) diode is proposed. A unit JFET cell pitch of 1.1 mum can be obtained. The specific on-resistance of the device is reduced to 14.4 mOmegamiddotmm2 which is close to state-of-art of power MOSFET. The integrated JBS diode shows 35% and 30% reduction on forward voltage drop and reverse recovery charge respectively compared with its p-n counterpart from the same integration technology
Keywords :
Schottky diodes; junction gate field effect transistors; power semiconductor diodes; power transistors; semiconductor device models; 1.1 micron; forward voltage drop reduction; junction barrier Schottky diode; reverse recovery charge reduction; trench power JFET; Leakage current; MOSFET circuits; P-n junctions; Power MOSFET; Power electronics; Resists; Schottky diodes; Semiconductor diodes; Switches; Voltage; JFET; integration; power; schottky diode; trench;
Conference_Titel :
Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
1-4244-0364-2
Electronic_ISBN :
0197-2618
DOI :
10.1109/IAS.2006.256546
