Title :
The Properties of Ge-C Thin Films Deposited using Dual Hollow Cathodes
Author :
Huguenin-Love, J.L. ; Soukup, R.J. ; Ianno, N.J. ; Schrader, J.S. ; Dalal, V.L.
Author_Institution :
Dept. of Electr. Eng., Nebraska Univ., Lincoln, NE
Abstract :
Experimental results on thin films of the new material Gex C1-x, deposited by a unique dual plasma hollow cathode sputtering technique are presented. The GeC films grown on etched Si (100) exhibited remarkable crystallinity with a lattice spacing very near that of Si. This order has been characterized using X-ray diffraction (XRD) and Raman spectroscopy. The deposition rate ratio of Ge to C did not have a great effect on the crystallinity nor on the presence or absence of Ge-C lattice bonds. However, the substrate type had a great influence. Although microcrystalline films of GeC were grown on oxidized Si surfaces, the Ge-C lattice bond did not appear to be present in all cases though it was for films grown on Si etched with HF. The photon absorption for these films was greater than that for pure Si and for pure Ge. This promising result indicates that this material has potential for future photovoltaic devices
Keywords :
Raman spectra; X-ray diffraction; etching; germanium compounds; plasma materials processing; sputter deposition; thin films; GeC; Raman spectroscopy; Si; Si (100) surface; X-ray diffraction; XRD; crystallinity; dual plasma hollow cathode sputtering technique; lattice bonds; lattice spacing; microcrystalline films; photon absorption; photovoltaic devices; thin films deposition; Cathodes; Crystalline materials; Crystallization; Lattices; Plasma applications; Plasma materials processing; Plasma properties; Plasma x-ray sources; Semiconductor films; Sputtering;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279377
