DocumentCode :
460061
Title :
Investigating Large Area Fabrication of Silicon Quantum Dots in a Nitride Matrix for Photovoltaic Applications
Author :
Scardera, G. ; Puzzer, T. ; McGrouther, D. ; Pink, E. ; Fangsuwannarak, T. ; Conibeer, G. ; Green, M.A.
Author_Institution :
Centre of Excellence for Adv. Silicon Photovoltaic & Photonics, Univ. of New South Wales, Sydney, NSW
Volume :
1
fYear :
2006
fDate :
38838
Firstpage :
122
Lastpage :
125
Abstract :
The suitability of using dual-mode PECVD, in conjunction with high temperature annealing, to fabricate arrays of silicon nanocrystals in a nitride matrix over large areas is investigated. The formation of nanocrystals is verified using TEM, XRD, micro-Raman and FTIR. Initial results show reliable growth of a superlattice of Si nanocrystals over an area of 14 by 10.5 cm
Keywords :
Fourier transform spectra; Raman spectra; X-ray diffraction; annealing; elemental semiconductors; infrared spectra; nanostructured materials; nanotechnology; photovoltaic cells; plasma CVD; semiconductor quantum dots; semiconductor superlattices; silicon; transmission electron microscopy; FTIR; Fourier transform infrared spectroscopy; Si; TEM; X-ray diffraction; XRD; annealing; dual-mode PECVD; micro-Raman spectroscopy; nitride matrix; photovoltaic applications; silicon nanocrystals; silicon quantum dots; superlattice growth; transmission electron microscopy; Annealing; Fabrication; Nanocrystals; Photovoltaic systems; Quantum dots; Silicon; Solar power generation; Superlattices; Temperature; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
Type :
conf
DOI :
10.1109/WCPEC.2006.279379
Filename :
4059577
Link To Document :
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