Investigating Large Area Fabrication of Silicon Quantum Dots in a Nitride Matrix for Photovoltaic Applications

Author

Scardera, G. ; Puzzer, T. ; McGrouther, D. ; Pink, E. ; Fangsuwannarak, T. ; Conibeer, G. ; Green, M.A.

Author_Institution

Centre of Excellence for Adv. Silicon Photovoltaic & Photonics, Univ. of New South Wales, Sydney, NSW

Volume

1

fYear

2006

fDate

38838

Firstpage

122

Lastpage

125

Abstract

The suitability of using dual-mode PECVD, in conjunction with high temperature annealing, to fabricate arrays of silicon nanocrystals in a nitride matrix over large areas is investigated. The formation of nanocrystals is verified using TEM, XRD, micro-Raman and FTIR. Initial results show reliable growth of a superlattice of Si nanocrystals over an area of 14 by 10.5 cm

Keywords

Fourier transform spectra; Raman spectra; X-ray diffraction; annealing; elemental semiconductors; infrared spectra; nanostructured materials; nanotechnology; photovoltaic cells; plasma CVD; semiconductor quantum dots; semiconductor superlattices; silicon; transmission electron microscopy; FTIR; Fourier transform infrared spectroscopy; Si; TEM; X-ray diffraction; XRD; annealing; dual-mode PECVD; micro-Raman spectroscopy; nitride matrix; photovoltaic applications; silicon nanocrystals; silicon quantum dots; superlattice growth; transmission electron microscopy; Annealing; Fabrication; Nanocrystals; Photovoltaic systems; Quantum dots; Silicon; Solar power generation; Superlattices; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279379

Filename

4059577