Title :
Amorphous Transparent Conducting Oxides (TCOS) Deposited at T ⩽ 100 °C
Author :
Perkins, J.D. ; van Hest, Maikel F. A. M. ; Teplin, C.W. ; Alleman, J.L. ; Dabney, M.S. ; Gedvilas, L.M. ; Keyes, B.M. ; To, B. ; Ginley, D.S. ; Taylor, M.P. ; Readey, D.W.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO
Abstract :
We have employed a combinatorial high-throughput approach to explore transparent conducting oxide (TCO) materials deposited at Ts⩽100°C. For In-Zn-O (IZO) thin films deposited by sputtering from ceramic metal oxide targets at 100°C in argon, a broad maximum in the as-deposited conductivity is found for x~ 0.55 to 0.85 in InxZn1-xOy with σmax ap3000 Omega-1-cm-1 for xap0.8. This conductivity maximum correlates with the composition range found to be amorphous. These amorphous In-Zn-O (a-IZO) films are smooth, with an RMS roughness of ~0.3 nm. Post-deposition annealing experiments show that the a-IZO materials remain amorphous after 1 hour anneals at up to 600°C in either air or argon
Keywords :
amorphous state; annealing; conducting materials; electrical conductivity; indium compounds; sputter deposition; thin films; 1 hour; 100 C; InxZn1-xOy; RMS roughness; amorphous films; amorphous transparent conducting oxide materials; as-deposited conductivity; ceramic metal oxide targets; combinatorial high-throughput approach; post-deposition annealing; sputtering; Amorphous materials; Annealing; Argon; Composite materials; Conducting materials; Conductivity; Libraries; Temperature; Transistors; X-ray scattering;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0016-3
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279417
