Title :
Growth of High-Quality CuGaSe2 Thin Films using Ionized Ga Precursors
Author :
Yamada, Akira ; Miyazaki, Hisashi ; Miyake, Takahiro ; Chiba, Yoshiyuki ; Konagai, Makoto
Author_Institution :
Quantum Nanaoelectron. Res. Center, Tokyo Inst. of technol.
Abstract :
We have newly proposed a novel growth method for high quality CuGaSe2 (CGS) thin films in which ionized Ga was used as new source material. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy. The grain size enlargement was successfully demonstrated by using ionized Ga precursors. The experiments revealed that the local heating caused by energy released from high energy Ga ions was one of possible reasons of this grain size enlargement and that the migration energy enhancement of Ga precursors played an important role in the crystal growth of high quality CGS films
Keywords :
Raman spectra; X-ray diffraction; copper compounds; grain size; scanning electron microscopy; semiconductor thin films; ternary semiconductors; vacuum deposition; CGS thin films; CuGaSe2; Raman spectroscopy; SEM; X-ray diffraction; XRD; crystal growth; grain size; migration energy; scanning electron microscopy; Grain size; Photonic band gap; Photovoltaic cells; Raman scattering; Scanning electron microscopy; Substrates; Temperature; Transistors; X-ray diffraction; X-ray scattering;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279460
