Title :
Photoconverters for Solar TPV Systems
Author :
Khvostikov, V.P. ; Khvostikova, O.A. ; Gazaryan, P.Y. ; Sorokina, S.V. ; Potapovich, N.S. ; Malevskaya, A.V. ; Shvarts, M.Z. ; Kaluzhniy, N.A. ; Andreev, V.M. ; Rumyantsev, V.D.
Author_Institution :
Ioffe Physico-Tech. Inst.
Abstract :
In this work, LPE, MOCVD and Zn-diffusion techniques for GaSb, InGaAsSb and GaAs/Ge structures were applied for manufacturing the thermophotovoltaic (TPV) cells. Studies of the cells were carried out by a flash tester as well as under SiC and tungsten emitters, heated by radiation from a high power xenon lamp in a concentrated sunlight simulator. Maximum short circuit current density of 9-10 A/cm2 has been achieved in the cells
Keywords :
III-V semiconductors; MOCVD; diffusion; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; liquid phase epitaxial growth; short-circuit currents; thermophotovoltaic cells; zinc; GaAs-Ge; GaSb; InGaAsSb; LPE; MOCVD; SiC emitters; Zn-diffusion; concentrated sunlight simulator; flash tester; high power xenon lamp; manufacturing; photoconverters; short circuit current density; solar TPV systems; thermophotovoltaic cells; tungsten emitters; Circuit simulation; Circuit testing; Gallium arsenide; Lamps; MOCVD; Manufacturing; Silicon carbide; Solar heating; Tungsten; Xenon;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279543
