Photoconverters for Solar TPV Systems

Author

Khvostikov, V.P. ; Khvostikova, O.A. ; Gazaryan, P.Y. ; Sorokina, S.V. ; Potapovich, N.S. ; Malevskaya, A.V. ; Shvarts, M.Z. ; Kaluzhniy, N.A. ; Andreev, V.M. ; Rumyantsev, V.D.

Author_Institution

Ioffe Physico-Tech. Inst.

Volume

1

fYear

2006

fDate

38838

Firstpage

667

Lastpage

670

Abstract

In this work, LPE, MOCVD and Zn-diffusion techniques for GaSb, InGaAsSb and GaAs/Ge structures were applied for manufacturing the thermophotovoltaic (TPV) cells. Studies of the cells were carried out by a flash tester as well as under SiC and tungsten emitters, heated by radiation from a high power xenon lamp in a concentrated sunlight simulator. Maximum short circuit current density of 9-10 A/cm² has been achieved in the cells

Keywords

III-V semiconductors; MOCVD; diffusion; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; liquid phase epitaxial growth; short-circuit currents; thermophotovoltaic cells; zinc; GaAs-Ge; GaSb; InGaAsSb; LPE; MOCVD; SiC emitters; Zn-diffusion; concentrated sunlight simulator; flash tester; high power xenon lamp; manufacturing; photoconverters; short circuit current density; solar TPV systems; thermophotovoltaic cells; tungsten emitters; Circuit simulation; Circuit testing; Gallium arsenide; Lamps; MOCVD; Manufacturing; Silicon carbide; Solar heating; Tungsten; Xenon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279543

Filename

4059716