Title :
Suns-Voc and Minority Carrier Lifetime Measurements of III-V Tandem Solar Cells
Author :
Chhabra, Bhumika ; Jacobs, Sean ; Honsberg, Christiana B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Delaware Univ., Newark, DE
Abstract :
Quasi steady state photoconductance (QSS-PC) and the "Suns-Voc" technique have been extensively used for characterizing silicon solar cells. QSS-PC has been used to determine the minority carrier lifetime, saturation current and surface recombination velocity. In this paper, we use both techniques to measure III-V tandem solar cells and III-V material, demonstrating the utility of the Suns-Voc for tandem devices and the ability to apply the QSS-PC measurements to the III-V materials, including GaAs and GaN. PC1D modeling is used to explain the experimental results
Keywords :
III-V semiconductors; carrier lifetime; elemental semiconductors; gallium arsenide; gallium compounds; photoconductivity; semiconductor device models; silicon; solar cells; surface recombination; GaAs; GaN; III-V tandem solar cells; PC1D modeling; Si; Suns-Voc method; minority carrier lifetime; quasisteady state photoconductance; saturation current; silicon solar cells; surface recombination velocity; Charge carrier lifetime; Current measurement; Electrical resistance measurement; Gallium arsenide; III-V semiconductor materials; Optical materials; Photoconducting materials; Photovoltaic cells; Probes; Voltage;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279575
