Suns-Voc and Minority Carrier Lifetime Measurements of III-V Tandem Solar Cells

Author

Chhabra, Bhumika ; Jacobs, Sean ; Honsberg, Christiana B.

Author_Institution

Dept. of Electr. & Comput. Eng., Delaware Univ., Newark, DE

Volume

1

fYear

2006

fDate

38838

Firstpage

791

Lastpage

794

Abstract

Quasi steady state photoconductance (QSS-PC) and the "Suns-V_oc" technique have been extensively used for characterizing silicon solar cells. QSS-PC has been used to determine the minority carrier lifetime, saturation current and surface recombination velocity. In this paper, we use both techniques to measure III-V tandem solar cells and III-V material, demonstrating the utility of the Suns-V_oc for tandem devices and the ability to apply the QSS-PC measurements to the III-V materials, including GaAs and GaN. PC1D modeling is used to explain the experimental results

Keywords

III-V semiconductors; carrier lifetime; elemental semiconductors; gallium arsenide; gallium compounds; photoconductivity; semiconductor device models; silicon; solar cells; surface recombination; GaAs; GaN; III-V tandem solar cells; PC1D modeling; Si; Suns-V_oc method; minority carrier lifetime; quasisteady state photoconductance; saturation current; silicon solar cells; surface recombination velocity; Charge carrier lifetime; Current measurement; Electrical resistance measurement; Gallium arsenide; III-V semiconductor materials; Optical materials; Photoconducting materials; Photovoltaic cells; Probes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279575

Filename

4059748