Title :
Improvement of Below-Bandgap Photoabsorption in GaAs Solar Cells using GaAs/GaNAs/InGaAs Quantum Wells
Author :
Okada, Yoshitaka ; Kobayashi, Naoto ; Sasaki, Naoyuki
Author_Institution :
Inst. of Appl. Phys., Tsukuba Univ.
Abstract :
We have fabricated GaAs/GaNAs and GaAs/GaNAs/InGaAs multi-quantum wells (MQWs) introduced into the intrinsic region of GaAs p-i-n solar cells by atomic H-assisted RF-molecular beam epitaxy. Compared to the more conventional GaAs/InGaAs-based MQW solar cells, GaAs/GaNAs/InGaAs MQW solar cells can exhibit improved photoresponse in the below-bandgap energy region of GaAs for >870 nm. This is attributed to the extension of band edge into longer wavelengths as achieved by use of GaNAs-based dilute nitride materials
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wells; solar cells; wide band gap semiconductors; GaAs; GaAs-GaNAs; GaAs-GaNAs-InGaAs; III-V solar cells; atomic H-assisted RF-molecular beam epitaxy; below-bandgap photoabsorption; dilute nitrides materials; intrinsic region; multiquantum wells; semiconductor p-i-n solar cells; semiconductor quantum wells; semiconductor-based MQW solar cells; Atomic layer deposition; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; PIN photodiodes; Photovoltaic cells; Quantum well devices; Radiative recombination; Solar power generation; Tensile strain; Dilute nitrides; III-V solar cells; Quantum well solar cells;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279594
