Dislocation Generation in Si: A Thermo-Mechanical Model Based on Measurable Parameters

Author

Sopori, Bhushan ; Rupnowski, Przemyslaw ; Balzar, Davor ; Sheldon, Pete

Author_Institution

Nat. Renewable Energy Lab., Golden, CO

Volume

1

fYear

2006

fDate

38838

Firstpage

936

Lastpage

939

Abstract

A thermo-mechanical model for predicting dislocation distribution generated by thermal stresses in Si is described. We use an experimentally determined dislocation distribution in response to a predetermined flux to establish "initial" density. The basic thermal model and the procedure for determining this parameter are described. This approach can be applied to crystal growth and other cell fabrication steps to establish thermal conditions that can minimize dislocation generation for improved solar cell performance

Keywords

dislocations; elemental semiconductors; silicon; solar cells; thermal stresses; Si; cell fabrication; crystal growth; dislocation distribution; dislocation generation; initial density; measurable parameters; solar cell performance; thermal stresses; thermomechanical model; Capacitive sensors; Impurities; Photovoltaic cells; Plastics; Predictive models; Residual stresses; Semiconductor device modeling; Solar power generation; Thermal stresses; Thermomechanical processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279610

Filename

4059783