DocumentCode :
460174
Title :
Large-Area Thin-Film Free-Standing Monocrystalline Si Solar Cells by Layer Transfer
Author :
Kim, H.J. ; Depauw, V. ; Duerinckx, F. ; Beaucarne, G. ; Poortmans, J.
Author_Institution :
IMEC, Leuven
Volume :
1
fYear :
2006
fDate :
38838
Firstpage :
984
Lastpage :
987
Abstract :
This paper describes our progress achieved in thin-film free-standing monocrystalline silicon (FMS) solar cells by layer transfer process using porous silicon. The highest cell efficiency achieved for a 1times1 cm2 FMS solar cell is 13.5% with an open circuit voltage Voc=612 mV, current density Jsc =28.9 mA/cm2 and fill factor of FF=76.7%. In the effort of scaling-up of the cell area, the lift-off process was adapted to 10times10 cm2 substrates. The large-area epilayers from APCVD and LPCVD, respectively, were successfully processed into FMS solar cells, giving the best efficiency of 11.4% for the APCVD-FMS cell with an area of 11.1 cm2. Detailed study by quantum efficiency measurements, combined with SEM, revealed that the enhanced internal quantum efficiency and reflectance in the spectral range of lambda>825 nm for the APCVD-FMS cell can be attributed to the internal light reflection from the well-defined interface between the epilayer and the sintered porous, or quasi-monocrystalline silicon (QMS) layer
Keywords :
chemical vapour deposition; current density; elemental semiconductors; porous semiconductors; scanning electron microscopy; semiconductor epitaxial layers; silicon; solar cells; 13.5 percent; APCVD; FMS solar cells; LPCVD; QMS layer; SEM; Si; current density; epilayer; epilayers; internal light reflection; open circuit voltage; porous silicon; quasimonocrystalline silicon; thin-film free-standing monocrystalline solar cells; Current density; Flexible manufacturing systems; Optical reflection; Photovoltaic cells; Reflectivity; Semiconductor thin films; Silicon; Substrates; Thin film circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
Type :
conf
DOI :
10.1109/WCPEC.2006.279283
Filename :
4059795
Link To Document :
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