Title :
Damage-Layer-Mediated H Diffusion During SiN:H Processing: A Comprehensive Model
Author :
Sopori, Bhushan ; Reedy, Robert ; Jones, Kim ; Gedvilas, Lynn ; Keyes, Brian ; Yan, Yanfa ; Al-Jassim, Mowafak ; Yelundur, Vijay ; Rohatgi, Ajeet
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO
Abstract :
We describe a refined surface-damage model for H transport during SiN:H processing to explain recent observations in H passivation. We propose that surface-damaged layers act not only as a source of trapped H, but can also mediate H between Si and SiN:H. This capability enables exchange of H between SiN:H and Si, making passivation characteristics dependent on the surface damage as well as composition of the nitride. It also explains many other observations
Keywords :
elemental semiconductors; hydrogen; passivation; silicon; silicon compounds; surface diffusion; Si; SiN:H; hydrogen passivation; nitride; semiconductor materials; surface-damaged-layer-mediated H diffusion; Coatings; Firing; Hydrogen; Laboratories; Metallization; Passivation; Photovoltaic cells; Plasma applications; Plasma transport processes; Renewable energy resources;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279294
