Heterogeneous Integration Technique of Optoelectronic Dies to CMOS Circuits Via Metallic Bonding

Author

Robogiannakis, P. ; Kyriakis-Bitzaros, E.D. ; Minoglou, K. ; Katsafouros, S. ; Kostopoulos, A. ; Konstantinidis, G. ; Halkias, G.

Author_Institution

Inst. of Microelectron., Nat. Center for Sci. Res., Agia Paraskevi

Volume

1

fYear

2006

fDate

5-7 Sept. 2006

Firstpage

328

Lastpage

333

Abstract

The integration of complete optoelectronic dies, consisting of optical sources and detectors connected by waveguides for the employment of a photonic layer above CMOS integrated circuits has been proposed. Photonic dies are integrated to CMOS circuits through a novel metallic bonding technique that utilizes a thin multilayer structure of the Au-20Sn eutectic alloy along with a starting layer of a rare earth element (Gd). Its main advantage is the accomplishment of mechanical bonding and electrical connectivity of the heterogeneous devices in a single step. In this paper results on bonding quality and electrical characterization are presented

Keywords

CMOS integrated circuits; bonding processes; eutectic alloys; gold alloys; integrated optoelectronics; metallisation; tin alloys; Au-Sn-Gd; CMOS integrated circuits; electrical connectivity; eutectic alloy; heterogeneous integration; mechanical bonding; metallic bonding; optoelectronic dies; photonic dies; photonic layer; Bonding; CMOS technology; Gold; High speed optical techniques; Integrated circuit interconnections; Nonhomogeneous media; Optical surface waves; Optical waveguides; Thermal conductivity; Thermal expansion;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Systemintegration Technology Conference, 2006. 1st

Conference_Location

Dresden

Print_ISBN

1-4244-0552-1

Electronic_ISBN

1-4244-0553-x

Type

conf

DOI

10.1109/ESTC.2006.280020

Filename

4060744