Title :
Technology of Wide-Bandgap Diode Structures for Highfrequency Operation
Author :
Mutamba, K. ; Yilmazoglu, O. ; Cojocari, O. ; Sydlo, C. ; Pavlidis, D. ; Hartnagel, H.L.
Author_Institution :
Inst. fuer Hoehfrequenztechnik, Technische Univ. Darmstadt
Abstract :
This paper reports on technology development aspects for GaN-based diodes in view of their application at high frequencies. The investigated devices include structures for transferred electron effects for operation at high electric-fields as well as heterostructure varactors (HBV) and Schottky diodes for frequency multiplication function. The impact of factors such as high threshold voltage for transferred electron effects, strong piezoelectric effects and Schottky barrier properties on device technologies and performances are addressed
Keywords :
Schottky barriers; Schottky diodes; gallium compounds; piezoelectricity; varactors; wide band gap semiconductors; GaN; HBV; Schottky barrier properties; Schottky diodes; frequency multiplication function; heterostructure varactors; high frequency operation; piezoelectric effects; transferred electron effects; wide-bandgap diode structures; Doping; Electrons; Frequency; Gallium nitride; Metallization; Ohmic contacts; Paper technology; Schottky barriers; Schottky diodes; Voltage; GaN; HBV; Schottky; diode;
Conference_Titel :
International Semiconductor Conference, 2006
Conference_Location :
Sinaia
Print_ISBN :
1-4244-0109-7
DOI :
10.1109/SMICND.2006.283938
